论文部分内容阅读
２５６Ｍｂ、１Ｇｂ ＤＲＡＭ发展动态随着Ｇｂ级ＤＲＡＭ的问世，使存储器的发展又步入了一个新台阶。韩国三星采用０．２５μｍＣＭＯＳＩ艺制作的２５６ＭｂＤＲＡＭ，其驱动电压为２．２～２．４Ｖ，存取时间为４０ｕｓ。韩国现代电子已投资了１５亿美元在京矾道本部...
256Mb, 1Gb DRAM developments With the advent of Gb-level DRAM, the development of memory has entered a new level. South Korea’s Samsung 0.25M CMOS technology produced 256MbDRAM, its drive voltage is 2.2 ~ 2.4V, access time is 40us. Hyundai Electronics Korea has invested 1.5 billion US dollars in Beijing alumni headquarters ...