【摘 要】
：
With a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV,zinc oxide (ZnO) is considered quite promising for application in shortwavelength o
【机 构】
：
Applied Ion Beam Physics Laboratory (Key Laboratory of the Ministry of Education), Institute of Mode
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With a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV,zinc oxide (ZnO) is considered quite promising for application in shortwavelength optoelectronic devices.[1-3] The greatest challenge for its practical application is the fabrication of high-quality,stable p-type ZnO.It is very difficult to prepare p-type ZnO because of the compensation effect due to native defects or background impurities,as well as the limited solubility,deep energy level and deactivation of the acceptor dopants in ZnO.[4-6] In the past few decades,different dopants such as nitrogen (N),[7-9] phosphorus (p),[10] and arsenic (As)[11]have been used to prepare p-type ZnO.Among these dopants,N is one of the most promising since the ionic radius of N (0.146 nm) is close to that of O (0.138 nm)and it is easy to substitute O with N in ZnO.
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