论文部分内容阅读
介绍了以In0.03Ga0.97As0.99N0.01材料为基区的GaAs异质结双极型晶体管和 以GaAs0.51Sb0.49材料为基区的InP HBT。讨论了GaAs和InP HBT结构的新进展及其对性能的改善,并对各结构的适用范围和优缺点进行了比较。
The GaAs heterojunction bipolar transistor based on In0.03Ga0.97As0.99N0.01 and the InP HBT based on GaAs0.51Sb0.49 are introduced. The new progress of GaAs and InP HBT structure and its improvement on the performance are discussed. The applicable range, advantages and disadvantages of each structure are also compared.