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肖特基 I~2L 利用集成注入逻辑 I~2L 或 MTL 原理,和离子注入方法,在同样密度下能比普通 I~2L 获得更好的性能。肖特基二极管是在多收集极开关晶体管中形成的,它减小了信号摆幅,因此改善了功率延迟效率。极限本征速度同样可有所提高。本文叙述了肖特基 I~2L 的结构和特点并与普通的 I~2L 作了比较。对于设计有用的一个模型进行了讨论,已制成的集成实验结构,可直接提供普通的 I~2L 和肖特基 I~2L 的性能比较。实验结果表明肖特基 I~2L 的功率延迟效率比普通的 I~2L 提高两倍。
Schottky I ~ 2L using integrated injection logic I ~ 2L or MTL principle, and ion implantation method, the same density than the average I ~ 2L get better performance. Schottky diodes are formed in multi-collector switching transistors, which reduce the signal swing, thus improving the power delay efficiency. Ultimate eigenfrequencies can also be improved. This paper describes the structure and characteristics of Schottky I ~ 2L and compared with the conventional I ~ 2L. A useful model for the design is discussed, and the integrated experimental structure has been made to directly compare the performance of I ~ 2L and Schottky I ~ 2L. Experimental results show that Schottky I ~ 2L power delay efficiency than the normal I ~ 2L increased twice.