Monolithically integrated dual-wavelength photodetector based on a step-shaped Fabry-Prot filter

• 作 者: 范鑫烨 黄永清 任晓敏 段晓峰 胡服全 王琦
• 机 构: State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts
• 出 处: Chinese Optics Letters
• 发表日期: 2012年11期
• 关键词: photodetector rot filter shaped Fabry Bragg bandwidth AlGaAs realized absorber a

A novel long wavelength photodetector with dual-wavelength spectral response is designed and fabricated using a step-shaped Fabry-Prot (F-P) filter structure.The step-shaped GaAs/AlGaAs distributed Bragg reflectors and the InP PIN photodetector are grown on a GaAs substrate using low pressure metal organic chemical vapor deposition.High quality GaAs/InP heteroepitaxy is realized by employing a thin low temperature buffer layer.The photodetector structure is optimized by theoretical simulation.This device has a dual-peak distance of 19 nm (1 558 and 1 577 nm).The 3-dB bandwidth of 16 GHz is simultaneously obtained with peak quantum efficiencies of 8.5% and 8.6% around 1 558 and 1 577 nm,respectively.

A novel long wavelength photodetector with dual-wavelength spectral response is designed and fabricated using a step-shaped Fabry-P (Fl) filter structure. The step-shaped GaAs / AlGaAs distributed Bragg reflectors and the InP PIN photodetector are grown on a GaAs substrate using low pressure metal organic chemical vapor deposition. High quality GaAs / InP heteroepitaxy is realized by employing a thin low temperature buffer layer. The photodetector structure is optimized by theoretical simulation. This device has a dual-peak distance of 19 nm (1 558 and 1 577 nm). The 3-dB bandwidth of 16 GHz is simultaneously obtained with peak quantum efficiencies of 8.5% and 8.6% around 1 558 and 1 577 nm, respectively.