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本文采用中频孪生非平衡磁控溅射设备制备非晶ZnO薄膜,再以不同剂量的铝离子注入法制备氧化锌铝薄膜。并采用X射线、扫描电镜、四极电阻仪、霍尔效应等方法测量和分析了原始沉积的和铝金属离子注入掺杂ZAO膜在不同温度下退火的组织结构、形貌、电阻与工艺的关系。结果表明,金属离子注入铝的方法制备氧化锌铝薄膜的电阻值随着注入剂量的增加而减小,呈线形关系,透明度均在90%左右,在铝离子注入剂量大于1×1016时,透光率在75%～80%。研究表明,该方法可以任意调整铝离子的注入剂量,获得要求特性的ZAO薄膜。
In this paper, an amorphous ZnO thin film was prepared by a medium frequency twin unbalanced magnetron sputtering equipment, and then aluminum oxide thin films were prepared by different doses of aluminum ion implantation. The microstructures, topographies, electrical resistances and processes of the as-deposited and aluminum-doped ZAO films annealed at different temperatures were measured and analyzed by means of X-ray, SEM, quadrupole and Hall effect methods relationship. The results show that the resistance of zinc oxide aluminum thin films prepared by metal ion implantation into aluminum decreases linearly with the increase of the injected dose, and the transparency is about 90%. When the dose of aluminum ion implantation is more than 1 × 1016, Light rate of 75% to 80%. The research shows that this method can adjust the injection dose of aluminum ions arbitrarily and get the ZAO film with the required properties.