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以三聚氰胺、硝酸铁和硝酸镍为原料, 采用一锅法原位制备了一系列Ni和Fe共掺杂的g-C3N4 (Ni/FeC3N4) 材料.采用X射线粉末衍射和扫描电子显微镜表征了材料的形貌与结构, 采用X射线光电子能谱分析了掺杂离子的化学状态, 采用紫外-可见漫反射光谱和光致发光光谱进一步分析了Ni/Fe-C3N4的半导体性质.结果表明:所制备的复合材料与纯g-C3N4相比具有大的比表面积, Ni/Fe掺杂降低了g-C3N4的带隙宽度, 抑制了光生电子-空穴对的复合, 有效提高了其对甲基橙的光催化降解效率.“,”A series of Ni and Fe co-doped graphitic carbon nitride (Ni/Fe-C3N4) photocatalysts were successfully prepared by using Fe (NO3) 3·9 H2 O, Ni (NO3) 3·6 H2 O, and melamine as precursors.X-ray powder diffraction (XRD) and scanning electron microscopy (SEM) were used to confirm the morphology and structure of Ni/Fe-C3N4.X-ray photoelectron spectroscopy (XPS) was used to identify the chemical state of doping ion.UV-Vis diffuse reflectance spectroscopy (DRS) and photoluminescence spectrum (PL) were used to further analysis the semiconducting properties of Ni/Fe-C3N4.The results showed that the co-doping of Ni and Fe increased the surface area of g-C3N4, decreased the semiconductor band gap and reduced the recombination rate of electrons-holes effectively.