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要使CMOS器件的几何尺寸小于1μM、P沟部分是一个明显的障碍。过份缩小会损害整个器件的完整性,例如会引起自锁。另一个问题是“鸟嘴”,鸟嘴占据面积,因而限制了密度。最近,在国际电子器件会议(IEDM)上介绍了消除这种限制的几种新方法。Motorola公司和Arizona州立大学的研究人员证实,P沟器件上源和漏的肖特基结可消除自锁。选择铂化硅是因为它势垒高(N沟器件所需的低势垒材料不易与硅相容)。贝尔实验室的研究人员看到,肖特基势垒
To make the CMOS device geometry less than 1μM, the P-groove portion is a significant hurdle. Excessive reduction can compromise the integrity of the entire device, for example, causing self-locking. Another problem is the “beak”, the area occupied by the beak, thus limiting the density. Recently, several new ways of eliminating this limitation have been introduced at the International Electron Devices Conference (IEDM). Researchers at Motorola and Arizona State University confirmed that Schottky junctions on source and drain on P-channel devices eliminate self-locking. Platinum is chosen because of its high barrier (low barrier materials required for N-channel devices are not compatible with silicon). Bell Labs researchers see Schottky barrier