Effects of the p-AlInGaN/GaN superlattices' structure on the performance of blue LEDs

• 作 者: 刘娜 伊晓燕 梁萌 郭恩卿 冯向旭 司朝 姬小利 魏学成 路红喜 刘志强 张宁 王军喜 李晋闽
• 机 构: Research and Development Center for Semiconductor Lighting,Chinese Academy of Sciences,
• 出 处: Journal of Semiconductors
• 发表日期: 2014年02期
• 关键词: AlGaN confinement blocking normalized leakage friendly doping likely labeled hel

The advantages of the p-AlInGaN/GaN superlattices’(SLs) structure as an electron blocking layer(EBL) for InGaN blue light-emitting diodes(LEDs) were studied by experiment and APSYS simulation. Electroluminescence(EL) measurement results show that the LEDs with the p-AlInGaN/GaN SLs’ structure EBL exhibited better optical performance compared with the conventional AlGaN EBL due to the enhancement of hole concentration and hole carrier transport efficiency,and the confinement of electrons’ overflow between multiple quantum-wells(MQWs) and EBL.

The advantages of the p-AlInGaN / GaN superlattices’ (SLs) structure as an electron blocking layer (EBL) for InGaN blue light-emitting diodes (LEDs) were studied by experiment and APSYS simulation. Electroluminescence (EL) measurement results show that the LEDs with the p-AlInGaN / GaN SLs ’structure EBL shows better optical performance compared with the conventional AlGaN EBL due to the enhancement of hole concentration and hole carrier transport efficiency, and the confinement of electrons’ overflow between multiple quantum-wells (MQWs) and EBL.