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采用Sol－Gel工艺制备SiO_2－TiO_2复合薄膜，研究在不同温度下薄膜对HF缓冲溶液的刻蚀能力．薄膜经800℃热处理的刻蚀速率是200℃热处理的1／1000倍，利用这种差异，在薄膜上用激光进行致密化处理，从而形成所需的图形．由XRD和FT－IR光谱分析对造成这种刻蚀能力差异的原因进行了解释、讨论．显微Raman光谱揭示出薄膜经激光处理后，其致密化区域具有不同的晶化特征．说明激光光束的能量分布对其扫描区域的析晶分布有一定的对应关系．
SiO 2 -TiO 2 composite films were prepared by Sol-Gel process, and the etching ability of the films to HF buffer solution at different temperatures was studied. The etching rate of the film after heat treatment at 800 ° C is 1/1000 times that of the heat treatment at 200 ° C. Using this difference, the film is densified with a laser to form a desired pattern. The reasons for this difference in etching ability are explained and discussed by XRD and FT-IR spectral analysis. The Raman microscopic examination revealed that the densified area of the film has different crystallization characteristics after laser treatment. It shows that the energy distribution of the laser beam has a certain correspondence with the crystallographic distribution of the laser beam.