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用化学气相淀积方法,在Si(100)衬底上生长Ge组分渐变的Si1-xGex∶C合金薄膜。用X射线衍射(XRD)、喇曼散射光谱(Raman)、能量色散谱(EDS)等对所得到的样品进行了表征测量,着重研究了Si1-xGex∶C合金层生长温度对样品结构特征的影响。结果表明,Si1-xGex∶C合金层中的Ge原子浓度沿表面至衬底方向逐渐降低,其平均组分随着生长温度的升高而降低,这与较高生长温度(760～820℃)所导致的原子扩散效应相关;Si1-xGex∶C合金薄膜具有单一的晶体取向,薄膜的晶体质量随着温度的升高而降低。Si1-xGex∶C/Si样品载流子浓度沿衬底至表面方向逐渐上升且Si1-xGex∶C合金层总体呈p型导电,对其导电分布特性进行了分析研究。
A Ge composition-graded Si1-xGex:C alloy thin film was grown on a Si (100) substrate by a chemical vapor deposition method. The obtained samples were characterized by X-ray diffraction (XRD), Raman scattering spectroscopy (Raman) and energy dispersive spectroscopy (EDS). The effects of the growth temperature of Si1-xGex:C alloy on the structural characteristics of the samples influences. The results show that the Ge atom concentration in Si1-xGex:C alloy decreases gradually from the surface to the substrate, and the average composition decreases with the increasing of the growth temperature, which is in agreement with the higher growth temperature (760 ~ 820 ℃) Resulting in the atomic diffusion effect; Si1-xGex: C alloy film has a single crystal orientation, the film crystal quality decreases with increasing temperature. Si1-xGex:C / Si sample carrier concentration gradually increases from the substrate to the surface direction and Si1-xGex:C alloy layer is generally p-type conductivity, the conductivity distribution characteristics of the study.