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用C-V法测量TaSi_2与n型硅及p型硅的接触势垒高度。在TaSi_2和n型硅之间采用一个不超过2nm厚的氧化层以减小TaSi_2-n型硅二极管的漏电电流。测得TaSi_2-p型硅和TaSi_2-n型硅势垒高度分别为0.715eV和0.373eV。
The contact barrier height of TaSi_2 with n-type silicon and p-type silicon was measured by C-V method. An oxide layer no larger than 2 nm thick is used between TaSi 2 and n-type silicon to reduce the leakage current of the TaSi 2-n type silicon diode. Measured TaSi_2-p-type silicon and TaSi_2-n-type silicon barrier height were 0.715eV and 0.373eV.