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本文报道研究扩散掺钛的硅中深能级的结果。用DLTS法观测到三个与钛有关的深能级,即在n-Si(Ti)中有二个电子陷阱,能级位置分别为E_c—0.23eV和E_c—0.53eV,在p-Si(Ti)中有一个空穴陷阱,能级位置为E_v+0.32eV。详细的电容瞬态研究得到了这些能级在一定测试温度范围内的热激活能和俘获截面以及其它有关参量。本文还就测量结果对能级的键合性质和钉扎于那一能帝做了讨论。
This paper reports the results of the investigation of the deep-level silicon diffusion in Ti-doped silicon. Three deep-level titanium-related energy levels were observed by DLTS, that is, two electron traps in n-Si (Ti) with energy levels of E_c-0.23eV and E_c-0.53eV, respectively. Ti) has a hole trap in the energy level position E_v + 0.32eV. Detailed capacitance transient studies have obtained the thermal activation energy and capture cross sections for these energy levels over a range of test temperatures and other relevant parameters. This article also discusses the bonding properties of the energy levels and the pinning of that energy to the test.