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对高温贮存和功率老化寿命试验结果的统计分析表明,npn型双极晶体管的电流增益h_(FE)随时间的漂移量与其初始1/f噪声有关.初始1/f噪声越大,则其h_(FE)漂移量也越大.相对漂移量△h_(FE)/h_(FE)与初始1/f噪声谱密度S_(iB)(f)的相关系数远大于它与初始直流参数的相关系数.根据笔者已建立的h_(FE)时间漂移模型,证明h_(FE)漂移与1/f噪声可归因于同一物理起源.据此,1/f噪声测量作为一种快速且非破坏性的手段,可用于双极晶体管h_(FE)漂移失效的早期预测.
The statistical analysis of the results of high temperature storage and power aging test shows that the drift of current gain h FE of the npn bipolar transistor is related to the initial 1 / f noise.The larger the initial 1 / f noise, (FE), and the correlation coefficient between the relative drift △ h FE / h FE and the initial 1 / f noise spectral density S ij f is much larger than the correlation coefficient between the initial drift and the initial DC parameter According to the established h_ (FE) time drift model, it is proved that h_ (FE) drift and 1 / f noise can be attributed to the same physical origin. Therefore, 1 / f noise measurement is a fast and nondestructive Means can be used for early prediction of bipolar transistor h_ (FE) drift failure.