不同条件下脉冲光电晶体管结构的工作特性

• 作 者: 行军
• 出 处: 半导体情报
• 发表日期: 1971年03期
• 关键词: 光电晶体管 摄象 光学图象 威斯汀豪斯 镶嵌结构 阵列 传感元件 偏压 帧频 暗电流

引言近来,摄象和收集光学数据中采用顺序询问光电晶体管阵列的方法不断引起人们的注意。对一些线性和二维光电晶体管结构进行了研究,其中采用偏压顺序和信号转换相结合的方法实现了任何单一阵列位置的选择存取。因此,经这样选择的每一分立传感元件的光电响应与在其上面聚焦的光学图象基本部分相对应。已对脉冲模式下工作的光电晶体管的性能作了基本的描述,对观察到的帧积分传感的机理已取得了一致的意见。威斯汀豪斯公司经分析和实验努力,对总的概念又有所发展;该理论目前的发展已可概括特殊摄象镶嵌结构中遇到的互作用现象。

INTRODUCTION Recently, methods of sequentially interrogating phototransistor arrays in photographic and optical data collection have drawn increasing attention. Some linear and two-dimensional phototransistor structures have been studied, where the selective access to any single array location is achieved using a combination of bias order and signal conversion. Therefore, the optoelectronic response of each discrete sensing element thus selected corresponds to the substantial portion of the optical image focused thereon. The performance of the phototransistor operating in pulsed mode has been described in general and consensus has been reached on the observed mechanism of frame integral sensing. The Westinghouse Company, through its analysis and experimentation, has developed its general concept; the current development of this theory has allowed to summarize the interaction phenomena encountered in special camera-mount structures.