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本文对半导体器件“背压法”检漏的计算公式应用和密封性概念结合国际电工委员会(IEC)关于“密封”的标准中的有关条款作一简略讨论。一、对漏率计算具体应用条件的讨论“背压法”氦质谱检漏对封装后的半导体器件进行气密性测试,是一种无损检漏法。除了实芯的塑料包封器件和非气密的6235高强度聚脂漆封装外,对有一定包封体积又有高可靠要求的半导体器件,都可进行“背压法”氦检、检漏操作顺序已趋成熟[1,2],大致分
In this paper, the calculation formulas of leak detection of back-pressure method for semiconductor devices and the concept of tightness are briefly introduced in connection with the relevant provisions of International Electrotechnical Commission (IEC) standard on “sealing”. First, the calculation of the leakage rate of the specific application of the discussion “back pressure method” helium mass spectrometry leak detection of the semiconductor device after sealing gas tightness test is a non-destructive leak detection method. In addition to the solid plastic encapsulation and non-hermetic 6235 high-strength polyester paint package, there is a “back pressure” helium test for leak detection of semiconductor devices that have a certain encapsulation volume and high reliability requirements Operating sequence has matured [1,2], roughly divided