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采用铯氧多次交替激活可获得积分灵敏度高达１７００μＡ／ｌｍ、逸出功低至１．２～１．３ｅＶ的负电子亲和势ＧａＡｓ光电发射材料。本文介绍了ＧａＡｓ光电材料的激活系统及其逸出功测试系统，叙述了艳氧多次交替激活工艺，给出了激活过程中灵敏度与逸出功的变化曲线，分析了ＧａＡｓ光电材料导带上内光电子波函数的透射系数与逸出功之间的关系，最后讨论了逸出功测试在高性能ＧａＡｓ光电材料制备过程中的作用。
By alternately activating Cesium Oxygen for many times, negative electron affinity GaAs photoemissive materials with integrated sensitivity of up to 1700μA / lm and a low work function of 1.2 ~ 1.3eV can be obtained. In this paper, the activation system of GaAs optoelectronic material and its work function test system are described. The alternating activation process of multiple reactive oxygen species is described. The curves of the sensitivity and work function during activation are given. The relationship between the transmission coefficient of the photoelectron wave function and the work function is discussed. Finally, the function of the work function test in the preparation of high-performance GaAs photoelectric material is discussed.