Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its she

• 作 者: 何晓光 赵德刚 江德生
• 机 构: State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sc
• 出 处: Chinese Physics B
• 发表日期: 2015年06期
• 关键词: derivation sheet AlGaN piezoelectric cited confusion calculating correct fitting

Models for calculating the sheet densities of two-dimensional electron gas(2DEG) induced by spontaneous and piezoelectric polarization in Al GaN/GaN,Al GaN/Al N/GaN,and GaN/Al GaN/GaN heterostructures are provided.The detailed derivation process of the expression of 2DEG sheet density is given.A longstanding confusion in a very widely cited formula is pointed out and its correct expression is analyzed in detail.

Models for calculating the sheet densities of two-dimensional electron gas (2DEG) induced by spontaneous and piezoelectric polarization in Al GaN / GaN, Al GaN / Al N / GaN, and GaN / Al GaN / GaN heterostructures are provided. The detailed derivation process of the expression of 2DEG sheet density is given. A longstanding confusion in a very widely cited formula is pointed out and its correct expression is analyzed in detail.