论文部分内容阅读
为改善聚酰亚胺(PI)衬底Cu(In,Ga)Se2(CIGS)薄膜的附着性,提出在NaF沉积前预先在Mo层上蒸发沉积100nm厚的In-Ga-Se(IGS)薄膜的新掺Na工艺。结果表明:这种IGS-NaF-CIGS式新工艺可显著改善CIGS薄膜的附着,而且CIGS薄膜材料和器件特性没有显著退化;新工艺促进了NaInSe2的生成,减少了In-Se二元相的残余,但也造成薄膜电阻率的升高和电池填充因子的下降,进而导致制备的PI衬底CIGS电池的转换效率由9.8%降至9.0%。综合考虑附着性的改善和器件效率的轻微下降,新工艺利大于弊,有很好的应用前景。
In order to improve the adhesion of a polyimide (PI) substrate Cu (In, Ga) Se2 (CIGS) thin film, it is proposed that a 100 nm thick In-Ga-Se The new doping Na process. The results show that the new IGS-NaF-CIGS process can significantly improve the adhesion of CIGS thin films, and the CIGS thin film materials and device characteristics have not significantly degraded; the new process promotes the formation of NaInSe2 and reduces the residual In-Se binary phase , But also caused the increase of the resistivity of the thin film and the decrease of the battery fill factor, which further reduced the conversion efficiency of the prepared PI substrate CIGS battery from 9.8% to 9.0%. Considering the improvement of adhesion and the slight decrease of the efficiency of the device, the new technology outweigh the disadvantages and has good application prospect.