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A novel polymethacrylate containing azoanthraquinone chromophore in the side chain(PMAzoaq6) was synthesized and characterized.An electronic memory device having the indium-tin oxide(ITO)/PMAzoaq6/Al sandwich structure was fabricated and its electrical bistability was investigated.The as-fabricated device was initially found to be at the OFF state and the switching threshold voltage was 1.5 V.After undergoing the OFF-to-ON transition,the device maintains the high conducting state(ON state) even after turning off the electrical power and applying a reverse bias.The device exhibits a write-once-read-many-times(WORM) memory effect with a high ON/OFF current ratio of up to 105 and a long retention time in both ON and OFF states,which demonstrated that the synthetic azoanthraquinone-containing polymer possesses a high potential to become polymeric memory devices.
A novel polymethacrylate containing azoanthraquinone chromophore in the side chain (PMAzoaq6) was synthesized and characterized. An electronic memory device having the indium-tin oxide (ITO) / PMAzoaq6 / Al sandwich structure was fabricated and its electrical bistability was investigated. device was initially found to be at the OFF state and the switching threshold voltage was 1.5 V. After thegoing the OFF-to-ON transition, the device maintains the high conducting state (ON state) even after turning off the electrical power and applying a reverse bias. The device exhibits a write-once-read-many-times (WORM) memory effect with a high ON / OFF current ratio of up to 105 and a long retention time in both ON and OFF states, which demonstrated that the synthetic azoanthraquinone-containing polymer possesses a high potential to become polymeric memory devices.