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用电子回旋共振等离子体化学汽相沉积 (ECRCVD)法 ,在单晶硅 (10 0 )衬底上沉积生长出了具有 { 2 2 1}结构特性的连续的结晶态 β C3N4 薄膜。使用扫描电镜 (SEM)观测了沉积薄膜的形态 ;采用X射线光电子光谱 (XPS) ,X射线衍射 (XRD)和拉曼散射表征薄膜的结构。研究表明 ,沉积结晶态 β C3N4 薄膜具有 { 2 2 1}结构特性。
The continuous crystallized β C3N4 thin films with {2 2 1} structure were deposited on single crystal silicon (10 0) substrates by ECRVD method using the electron cyclotron resonance plasma enhanced chemical vapor deposition (ECRCVD) method. The morphology of the deposited films was observed by scanning electron microscopy (SEM). The structure of the films was characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and Raman scattering. The results show that the deposited crystalline β C3N4 thin film has {2 2 1} structural characteristics.