硫脲及其衍生物对铜阴极电沉积影响的电化学研究

• 作 者: 董云会 邹爱红 赵云霞
• 机 构: 淄博学院材料系!淄博255200,淄博学院材料系!淄博255200,淄博学院材料系!淄博255200
• 出 处: 电化学
• 发表日期: 1999年03期
• 关键词: 电化学研究 阴极铜 电沉积 反应机理 峰电流 三电极体系 铜沉积 循环伏安法 电解温度 循环伏安图

The effects of thiourea and its derivate on the electrodeposition of copper from the dilute acid sulphate solutions have been studied by using potential sweep techniques at quasisteady state. Limiting current densities( I d),exchange current densities( i 0) and αn are obtained by data processing with the least square method.Thiourea has a depolarizing effect on the copper depositing at concentrations below 8 mg·L -1 ,and a polarizing effect at higher concentration (>10 mg·L -1 ),and it changes the mechanism of copper deposition reaction.Propenyltiourea and Phenylthiourea have a depolarizing effect on the copper depositing,but the mechanism of copper deposition reaction is not changed.XRD results indicate with increasing thiourea concentration the predominant oriedthation of copper deposition from (220) to (111).

The effects of thiourea and its derivate on the electrodeposition of copper from the dilute acid sulphate solutions have been studied by using potential sweep techniques at quasisteady state. Limiting current densities (I d), exchange current densities (i 0) and αn are obtained by data processing with the least square method. hiourea has a depolarizing effect on the copper depositing at concentrations below 8 mg · L -1, and a polarizing effect at higher concentration (> 10 mg · L -1), and it changes the mechanism of copper deposition reaction. Propenyltiourea and Phenylthiourea have a depolarizing effect on the copper depositing, but the mechanism of copper deposition reaction is not changed. XRD results indicate with increasing thiourea concentration the predominant oried of copper deposition from (220) to (111).