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研究了生长在弛豫Si0.79Ge0.21/梯度Si1-xGex/Si虚拟衬底上的应变硅材料的制备和表征,这一结构是由减压外延气相沉积系统制作的.根据双晶X射线衍射计算出固定组分SiGe层的Ge浓度和梯度组分SiGe层的梯度,并由二次离子质谱仪测量验证.由原子力显微术和喇曼光谱测试结果得到应变硅帽层的表面粗糙度均方根和应变度分别为2.36nm和0.83%;穿透位错密度约为4×104cm-2.此外,发现即使经受了高热开销过程,应变硅层的应变仍保持不变.分别在应变硅和无应变的体硅沟道上制作了nMOSFET器件,并对它们进行了测量.相对于同一流程的体硅MOSFET,室温下观测到应变硅器件中电子的低场迁移率显著增强,约为85%.
The preparation and characterization of a strained silicon material grown on a relaxed Si0.79Ge0.21 / gradient Si1-xGex / Si virtual substrate was investigated by a vacuum epitaxial vapor deposition system.According to the dual-crystal X-ray The Ge concentration of the fixed component SiGe layer and the gradient of the SiGe layer gradient component were calculated by diffraction and confirmed by secondary ion mass spectrometry.The atomic force microscopy and Raman spectroscopy results showed that the surface roughness The root mean square and the strain are 2.36nm and 0.83%, respectively, and the threading dislocation density is about 4 × 104cm-2. In addition, it is found that the strain of the strained silicon layer remains the same even after being subjected to the high thermal overhead process, NMOSFET devices were fabricated and measured on silicon and unstrained bulk silicon channels.Compared with the bulk silicon MOSFET in the same process, the observed low-field mobility of electrons in the strained silicon device was significantly enhanced at room temperature, about 85 %.