Heavy ion micro-beam study of single-event transient(SET) in Si Ge heterjunction bipolar transistor

• 作 者: Jinxin ZHANG Hongxia GUO Fengqi ZHANG Chaohui HE Pei LI Yunyi YAN Hui WANG Linxia ZHANG
• 机 构: School of Aerospace Science and Technology, Xidian University,Xinjiang Technical Institute of Physic
• 出 处: Science China(Information Sciences)
• 发表日期: 2004年期
• 关键词: bipolar transistor attractive extreme operate irradiation charges hardness outst

Silicon-germainum heterojunction bipolar transistor(Si Ge HBT)has been demonstrated to be suitable in extreme environment because of its superior temperature characteristics which can operate from 43 K to 400 K[1].In addition,outstanding hardness to both total ionizing dose(TID)radiation and displacement damage make Si Ge HBT technology particularly attractive for space

Silicon-germainum heterojunction bipolar transistor (Si Ge HBT) has been demonstrated to be suitable in extreme environment because of its superior temperature characteristics which can operate from 43 K to 400 K [1] .In addition, outstanding hardness to both total ionizing dose ( TID) radiation and displacement damage make Si Ge HBT technology particularly attractive for space