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磁控溅射法制备ＳｉＯ２ 膜传统上采用射频溅射工艺，但它成本较高，效率较低，无法充分满足大面积镀膜工业生产的需要。近年来，反应磁控溅射在解决异常弧光放电和阳极消失等问题方面取得了很大的进展，已成功地应用于包括ＳｉＯ２ 在内的绝缘膜沉积，成为镀制介质膜的一个新方向。本文介绍和评述了反应溅射所遇到的几个关键问题，结合机理讨论了相应的解决办法，并认为反应溅射有重要实用价值和发展前景。
Magnetron Sputtering SiO2 film is traditionally used RF sputtering process, but it is costly, less efficient, can not fully meet the needs of large-scale coating industry. In recent years, reactive magnetron sputtering has made great progress in solving the problems of anomalous arc discharge and anode disappearance. It has been successfully applied to the deposition of insulating films including SiO2 as a new direction of plating dielectric films. This paper introduces and reviews several key problems encountered in reactive sputtering. The corresponding solutions are discussed in combination with the mechanism, and reactive sputtering is considered to have important practical value and development prospects.