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基于转移电子效应提出半绝缘光电导开关延迟偶极畴工作模式,理论分析了强场下开关的周期性减幅振荡.指出开关的周期性减幅振荡是由于外电路的自激振荡和开关的转移电子振荡共同作用引起的.开关的偏置电场在交流电场的调制下,当畴到达阳极时,开关电场下降到低于耿氏阈值电场ET而高于维持电场ES(维持畴生存所需的最小电场),开关将工作于延迟偶极畴模式.进而从理论和实验两方面指出半绝缘GaAs光电导开关是一种光注入畴器件,光生载流子的产生使得载流子浓度与器件长度乘积满足产生空间电荷畴所需的条件.
Based on the transfer electron effect, the working mode of the delayed dipolar domain of semi-insulating photoconductive switches is proposed, and the periodic reduction oscillation of the switch under strong field is theoretically analyzed. It is pointed out that the periodic oscillation of the switch is caused by the self-oscillation of the external circuit and the switching Transfer of electronic oscillations caused by the switch bias electric field in the modulation of the AC electric field when the domain reaches the anode, the switch electric field drops below the Gunn threshold electric field ET and higher than the sustain electric field ES (to maintain the survival of the domain required Minimum electric field), the switch will work in the delayed dipole domain mode.Then from the theoretical and experimental aspects, it is pointed out that the semi-insulating GaAs photoconductive switch is a kind of light-injecting domain device. The generation of photo-generated carriers makes the carrier concentration and device length The product satisfies the conditions required for generating space charge domains.