High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Org

• 作 者: 郭红雨 吕元杰 顾国栋 敦少博 房玉龙 张志荣 谭鑫 宋旭波 周幸叶 冯志红
• 机 构: National Key Laboratory of ASIC,Hebei Semiconductor Research Institute,Hebei Semiconductor Research
• 出 处: Chinese Physics Letters
• 发表日期: 2015年11期
• 关键词: AlGaN drain contacts Electron extrinsic etching annealing fabrication shaped waf

Nonalloyed ohmic contacts regrown by metal-organic chemical vapor deposition are performed on AlGaN/GaN high-electron-mobility transistors.Low ohmic contact resistance of 0.15Ω·mm is obtained.It is found that the sidewall obliquity near the regrown interface induced by the plasma dry etching has great influence on the total contact resistance.The fabricated device with a 100-nm T-shaped gate demonstrates a maximum drain current density of 0.95 A/mm at V_(gs) = 1 V and a maximum peak extrinsic transcondutance G_m of 216mS/mm.Moreover,a current gain cut-off frequency f_t of 115 GHz and a maximum oscillation frequency f_(max) of 127 GHz are achieved.

Nonalloyed ohmic contacts regrown by metal-organic chemical vapor deposition are performed on AlGaN / GaN high-electron-mobility transistors. Low ohmic contact resistance of 0.15 Ω · mm is obtained. It is found that the sidewall obliquity near the regrown interface induced by the plasma dry etching has great influence on the total contact resistance. The fabricated device with a 100-nm T-shaped gate demonstrates a maximum drain current density of 0.95 A / mm at V_ (gs) = 1 V and a maximum peak extrinsic transcondance G_m of 216 mS / mm. Moreover, a current gain cut-off frequency f_t of 115 GHz and a maximum oscillation frequency f_ (max) of 127 GHz are achieved.