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Metallic copper(Cu) films were deposited on a Si (100) substrate by unbalancedmagnetron sputtering enhanced by radio-frequency plasma and external magnetic field confine-ment.The morphology and structure of the films were examined by scanning electron microscopy(SEM),atomic force microscope (AFM) and X-ray diffraction (XRD).The surface average rough-ness of the deposited Cu films was characterized by AFM data and resistivity was measured bya four-point probe.The results show that the Cu films deposited with radio-frequency dischargeenhanced ionization and external magnetic field confinement have a smooth surface,low surfaceroughness and low resistivity.The reasons may be that the radio-frequency discharge and externalmagnetic field enhance the plasma density,which further improves the ion bombardment effectunder the same bias voltage conditions.Ion bombardment can obviously influence the growthfeatures and characteristics of the deposited Cu films.
Metallic copper (Cu) films were deposited on a Si (100) substrate by unbalanced magnetron sputtering enhanced by radio-frequency plasma and external magnetic field confine-ment. The morphology and structure of the films were examined by scanning electron microscopy (SEM), atomic force microscope (AFM) and X-ray diffraction (XRD). The surface average rough-ness of the deposited Cu films was characterized by AFM data and resistivity was measured by four-point probe. results show that the Cu films deposited with radio -frequency dischargeenhanced ionization and external magnetic field confinement have a smooth surface, low surfaceroughness and low resistivity. the reasons may be that radio-frequency discharge and externalmagnetic field enhance the plasma density, which further improves the ion bombardment effectunder the same bias voltage conditions .on Bombardment can obviously influence the growthfeatures and characteristics of the deposited Cu films.