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本文报导了在３００～４１０℃下采用ＭＯＣＶＤ技术制备多晶（非晶和微晶）薄层氧化物ＴｉＯ＿２（Ｆｅ＿２Ｏ＿３、ＳｎＯ＿２和Ｉｎ＿２Ｏ＿３·Ｓｎ）膜的结果，这些薄层氧化物的结构、表面形态和光电化学性质采用ｘ－射线衍射、电于显微镜和三电极方法进行描述。实验指出，这些薄层从化物适宜于作为光电极的透明导电涂层和分解水的光催化。
In this paper, the results of the preparation of polycrystalline (amorphous and microcrystalline) thin films of TiO 2 (Fe 2 O 3, SnO 2 and In 2 O 3 · Sn) by MOCVD at 300-410 ℃ have been reported. The structure and surface morphology of these thin oxides And Photoelectrochemical properties are described using x-ray diffraction, electron microscopy and three-electrode methods. Experiments have shown that these thin layer slats are suitable for photocatalysis as a transparent conductive coating for photoelectrodes and for decomposing water.