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The trajectory of incident ions penetrating through the device plays a vital role in single event upset (SEU) occurrence. In present work, two types of Geant4 tools, MRED (Monte Carlo Radiative Energy Deposition, programmed by Vanderbilt University) and MUFPSA (Multiple Functional Package for SEU Analysis, by Materials Research Center), have been simultaneously utilized in calculation of SEU characterization. In particular, analyzing SEU by variance of the methods of incidence, separately normal (unidirectional) incidence and omnidirectional incidence with the ions fluence randomized over 2π steradians.
The present invention works two types of Geant4 tools, MRED (Monte Carlo Radiative Energy Deposition, programmed by Vanderbilt University) and MUFPSA (Multiple Functional Package for SEU Analysis, by Materials Research Center), have been synchronized utilized in calculation of SEU characterization. In particular, analyzing SEU by variance of the methods of incidence, separately normal (unidirectional) incidence and omnidirectional incidence with the ions fluence randomized over 2π steradians.