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采用化学气相沉积 (CVD)法 ,在ZnSeH2 -Ar体系中生长了用于红外光学窗口的ZnSe透明多晶体。测定了ZnSe样品的XRD谱和红外透过光谱 ,用光学显微镜观察了样品的显微形貌 ;讨论了CVD工艺中生长参数对ZnSe晶体质量的影响。研究结果表明 :通过优化的生长工艺 ,生长温度在 5 0 0～ 75 0℃ ,压力在 10 0～ 15 0 0Pa的范围内 ,可以制备出高质量ZnSe多晶体 ;在 8～ 12 μm波段范围内 ,其红外透过率达70 %以上。
ZnSe transparent polycrystals for infrared optical windows have been grown in the ZnSeH2-Ar system by chemical vapor deposition (CVD). The XRD spectrum and infrared transmission spectrum of ZnSe samples were measured. The microstructure of ZnSe samples was observed by optical microscope. The influence of growth parameters on the quality of ZnSe crystals was discussed. The results show that high quality ZnSe polycrystals can be prepared by optimizing the growth process at the growth temperature of 500 ~ 75 0 ℃ and the pressure of 10 0 ~ 1500Pa; in the range of 8 ~ 12 μm , The infrared transmittance of more than 70%.