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报道了用无水ＳｎＣｌ４和ＳｎＣｌ４·５Ｈ２Ｏ为原料，用热喷涂法制备ＳｎＯ２薄膜，在基片温度为５３０℃时，制得薄膜的Ｘ－射线，ＳＥＭ图及其光电性质．总结出含Ｈ２Ｏ的ＳｎＣｌ４制得的薄膜生长速度快，电阻率低，两者在结构上无明显差异。
The SnO2 thin films were prepared by thermal spray method using anhydrous SnCl4 and SnCl4 · 5H2O as raw materials. The X-ray and SEM images of the thin films were obtained at 530 ℃. It is concluded that SnCl4 containing H2O has a fast growth rate and a low resistivity, and there is no obvious difference in structure between the two.