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报道了４．２Ｋ下Ｎ型高纯ＭＢＥＧａＡｓ的非线性伏安（Ｉ－Ｖ）特性．在第一个Ｓ形负阻区的高场侧，发现了另外三个Ｓ形负阻区．建立了新的产生－复合模型，给出了多个负阻现象的微观物理机制．进一步的实验结果表明，非线性Ｉ－Ｖ特性的滞后现象与外电场变化的历史有关．
The non-linear voltammetric (I-V) characteristics of N-type high purity MBEGaAs at 4.2K have been reported. On the upper field side of the first S-shaped negative resistance region, three additional S-shaped negative resistance regions were found. A new generation-compound model is established, and the micro-physical mechanisms of several negative resistance phenomena are given. Further experimental results show that the hysteresis of the nonlinear I-V characteristic is related to the history of the change of the external electric field.