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据1990年7月份日本《JEE》杂志报道,日本富士通研究所最近研究了一种称为隧道双极量子阱(TBQ)的新的超晶格结构,它可应用于高速光开关.该结构的基本概念是基于在超高速情况下,称为隧道现象的量子效应能改变半导体的光性质.实验证实,超高速光开关已达1ps,它把通常半导体开关速度提高了1000倍.富士通所发展的隧道双极量子阱结构是一种非线性光学半导体超晶格结构,它由两个量子阱结构的交迭层组成.一个是能产生激励的窄量子阱,另一个是处于不需电子的关闭状态的宽量子阱结构.
According to Japan’s JEE magazine in July 1990, the Fujitsu Research Institute of Japan recently studied a new superlattice structure called the tunnel bipolar quantum well (TBQ), which can be applied to high-speed optical switches. The basic concept is based on the fact that the quantum effect of a tunneling phenomenon can change the optical properties of a semiconductor at very high speeds. The experiments show that the ultra-high speed optical switch has reached 1ps and it has increased the usual semiconductor switching speed by 1000. Fujitsu Limited The tunnel bipolar quantum well structure is a nonlinear optical semiconductor superlattice structure consisting of two overlapping layers of quantum well structures, one is a narrow quantum well that can generate an excitation, and the other is an electronically inactive State wide quantum well structure.