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晶体管架构方面的下一步很可能是硅纳米线——这种极薄的硅导线将组成晶体管的沟道,四面由环绕式二氧化硅围住,这种二氧化硅就叫高K金属栅极(high-K metal gate)。
The next step in the transistor architecture is likely to be silicon nanowires - thin silicon wires that make up the transistor’s channel, surrounded on all sides by a wrap-around silicon dioxide called a high-K metal gate (high-K metal gate).