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本文采用高分子辅助化学溶液沉积(PACSD)的方法,在双轴织构的Ni-5%W合金基底上制备了Sm0.2Ce0.8O1.9-x(SCO)单一缓冲层,并研究了不同退火温度对缓冲层织构和微结构的影响.研究结果表明,通过1100℃退火处理可以得到织构优良、表面致密平整,厚度可达200nm的SCO单一缓冲层.在该缓冲层上用类似的方法沉积的YBCO薄膜的临界超导转变温度Tc0为87K且Jc可达0.5MA.cm-2(在77K时).可以认为,Sm掺杂CeO2是制备单一缓冲层的一种有效的适合大规模生产的新途径.
In this paper, a single buffer layer of Sm0.2Ce0.8O1.9-x (SCO) was prepared on a biaxially textured Ni-5% W alloy substrate by polymer assisted chemical solution deposition (PACSD) Annealing temperature on the texture and microstructure of the buffer layer.The results show that a single SCO buffer layer with excellent texture, dense surface and thickness up to 200nm can be obtained by annealing at 1100 ℃, The critical superconducting transition temperature (Tc0) of the deposited YBCO films is 87K and the Jc is up to 0.5MA.cm-2 at 77 K. It is believed that Sm-doped CeO2 is an effective and suitable large- New ways of production.