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本文叙述了一种新的C-G-V法,用来测量FET薄层材料中的杂质和迁移率分布。该法的一个附加优点是对材料的非破坏性。进行了一些初步实验,结果与霍尔测量的数据符合良好。
This article describes a new C-G-V method for measuring impurity and mobility distributions in FET thin-layer materials. An added advantage of this method is the non-destructive nature of the material. A few preliminary experiments were carried out and the results were in good agreement with the Hall measurements.