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多倍频程场效应晶体管(FET)放大器的集总元件阻抗匹配网络已研制成。这种集总元件是以平行极板电容和高阻抗线蚀刻在两块10密耳厚的氧化铝衬底上来实现的。S波段至K_u波段的各种低噪声和功率放大器均用这种方法制造。在2—12和4—18 GHz频带范围内,这种功率放大器的增益为4dB,其输出功率大于1/2瓦。
Multi-octave field effect transistor (FET) amplifier lumped element impedance matching network has been developed. This lumped element is realized by parallel plate capacitance and high-impedance line etching on two 10 mil thick alumina substrates. Various low-noise and power amplifiers in the S band to K_u band are fabricated this way. The gain of this power amplifier is 4dB in the 2-12 and 4-18 GHz frequency bands and its output power is greater than 1/2 watt.