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通过直接栅电流测量方法研究了热载流子退化和高栅压退火过程中 PMOSFET’s热载流子损伤的生长规律 .由此 ,给出了热载流子引起 PMOSFET’s器件参数退化的准确物理解释 .并证明了直接栅电流测量是一种很好的研究器件损伤生长和器件参数退化的实验方法
The growth rules of PMOSFET’s hot carrier damage during hot carrier degeneration and high gate-voltage annealing are studied by the direct gate current measurement method, and an exact physical explanation of the parameter degradation of PMOSFET’s devices caused by hot carriers is given. It is also proved that direct gate current measurement is a good experimental method to study the device damage growth and device parameter degradation