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对高温退火非掺磷化铟 (In P)制备的半绝缘晶片的电学性质和均匀性进行了研究 .非掺低阻 N型磷化铟晶片分别在纯磷气氛和磷化铁气氛下进行 930℃、80 h退火均可获得半绝缘材料 .但在这两种条件下制备的两种 5 0 mm半绝缘晶片却呈现出不同的电学性质和均匀性 .纯磷气氛下制备的磷化铟片的电阻率和迁移率分别达到 10 6 Ω·cm和 180 0 cm2 / (V· s) ;而在磷化铁气氛下退火获得的半绝缘片的电阻率和迁移率分别高达 10 7Ω· cm 和30 0 0 cm2 / (V· s)以上 .对这两种半绝缘片和原生掺铁磷化铟半绝缘片的 PL - Mapping结果进一步比较表明 :在磷化铁气氛下退火获得的半绝缘材料的均匀性最好 ,而在纯磷气氛下制备的半绝缘磷化铟的均匀性较差
The electrical properties and uniformity of semi-insulating wafers prepared by high temperature annealing of indium-free indium phosphide (InP) were investigated.Non-doped low-resistivity N-type indium phosphide wafers were respectively subjected to 930 ℃, 80 h annealing can be obtained semi-insulating materials.But in these two conditions prepared two kinds of 50 mm semi-insulating wafers showed different electrical properties and uniformity of pure phosphorus atmosphere prepared indium phosphide The resistivity and the mobility reach 10 6 Ω · cm and 180 0 cm 2 / (V · s), respectively; while the resistivity and mobility of the semi-insulating sheet obtained by annealing in the phosphide atmosphere are as high as 10 7 Ω · cm and 30 0 0 cm2 / (V · s) .A comparison of the results of PL - Mapping of these two kinds of semi - insulating sheets and those of the native iron - doped indium phosphide semi - insulating sheets shows that the semi - insulating materials obtained by annealing in the atmosphere of phosphide The uniformity of the semi-insulating indium phosphide prepared under pure phosphorus atmosphere is poor