,Kinetic study of wet oxidation of Si0.5Ge0.5 alloy by Rutherford backscattering spectroscopy

• 作 者: ZHANG Jing-Ping CHEN Chang-chun LIU Jing-Hua ZHU De-Zhang XIE Dong-Zhu PAN Hao-Chang
• 机 构: Institute of Semiconductors, Shandong Normal University, Jinan 250014Laboratory of Nuclear Analysis
• 出 处: 核技术(英文版)
• 发表日期: 2000年2期
• 关键词: Si0.sGe0.5 alloy Wet oxidation Ratherford backscatteing spectroscopy (RBS)

The oxidation of Si0. sGeo.5 alloy has been investigated at the temperatures of 800℃ and 900 ℃. Rutherford backscattering spectroscopy has been employed to determine the composition and thickness of the oxide layers. Only Sio.5Geo. 5O2 layer formed during the oxidation at 800℃, whilst three layers, Si0.5Ge0.5O2, SiO2 and Ge, are existed after the oxidation at 900℃. Experimental results are interpreted by adding a germanium flux F4 in Deal-Grove oxidation model of Silicon.