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研究了碲镉汞富碲垂直液相外延技术.在研究该关键技术的过程中,提出了一种方法以检查外延前(Hg1-xCdx)1-yTey母液的均匀性.并且,通过减小生长腔体中的自由空间,对气体的对流和汞回流进行了抑制,及通过改进工艺过程中的温度控制方式来应对因对流和汞回流而造成的生长温度不确定性.在解决上述关键技术后,实现了碲镉汞垂直液相外延工艺的稳定性,所外延的中波碲镉汞材料的组分可重复性做到了±0.005,厚度控制能力达到了±5μm,40×30mm2外延材料的横向组分均匀性(相对均方差)小于1.3×10-3,同生长批次材料片与片之间的组分和厚度差异分别小于0.001和1μm.在10mm线度上,表面起伏小于1μm.经热处理后,中波汞空位p型材料在77K下具有较高的空穴迁移率.另外,和水平推舟技术相比,垂直碲镉汞液相外延在提供大批量和大面积相同性能材料方面具有明显的优势,这对于二代碲镉汞红外焦平面批生产技术和拼接型超大规模红外焦平面技术的发展都具有重要的意义.
In this study, a method was developed to check the homogeneity of Hg1-xCdx1-yTey mother liquors before epitaxy, and the growth of the Hg1-xCdx- The free space in the cavity suppresses gas convection and mercury backflow and addresses the temperature uncertainty of growth due to convection and mercury reflow by improving the temperature control in the process.After solving the above key technologies , To achieve the stability of the HgCdTe vertical liquid phase epitaxy process, and the epitaxial HgCdTe material has a repeatability of ± 0.005 and a thickness control ability of ± 5 μm, and a lateral width of 40 × 30 mm 2 of the epitaxial material The component uniformity (relative mean square error) is less than 1.3 × 10-3, the difference between the composition and thickness of the same growth batch material is less than 0.001 and 1μm, respectively, and the surface roughness is less than 1μm at 10mm linearity. After heat treatment, the mid-wave Hg mercury vacancy p-type material has a higher hole mobility at 77 K. In addition, vertical HgCdTe liquid-phase epitaxy is superior to horizontal push-boat technology in providing large quantities and large area of the same performance materials Has obvious advantages, which for two HgCdTe infrared focal plane batch development of production technology and ultra-large-scale mosaic of infrared focal plane technology has important significance.