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多功能低功耗芯片中存储、计算与通讯功能各模块的占用面积、数据交换速率等因素已经成为集成电路发展的瓶颈问题.可满足大数据核内传输速率的未来系统架构中高密度高性能存储技术需具备超低功耗、超小器件尺寸以及快速写入及非易失特性.未来存储技术包括采用新原理器件例如操控电子跃迁或离子移动代替电子输运、使用新材料以降低热量产生以及新型三维堆叠工艺提高密度.本综述聚焦于新材料特别是二维原子晶体在非易失存储技术中的应用.具有高电子迁移率、极限超薄沟道、超低界面态的二维原子晶体新材料因为其本征厚度约0.6–1.2 nm并具有丰富的能带结构为未来存储技术提供了优秀的解决方案,对器件进一步微缩提高集成度、提高稳定性和扩大应用场景以及开发新型存储器有着巨大潜力,是解决当今存储器功耗和集成度的崭新途径.
Multi-functional low-power chips in the memory, computing and communication functions of the module footprint, data exchange rate and other factors have become a bottleneck in the development of integrated circuits.Can satisfy the big data transmission rate in the future system architecture of high-density high-performance storage Technology requires ultra-low power consumption, ultra-small device size, and fast write and non-volatile features. Future storage technologies include the use of new principles devices such as manipulating electronic transitions or ion mobility instead of electron transport, using new materials to reduce heat generation, and New Three-Dimensional Stacking Process Increases Density This review focuses on the application of new materials, especially two-dimensional atomic crystals, in nonvolatile memory technology, two-dimensional atomic crystals with high electron mobility, ultra-thin ultra-thin channels, The new material, due to its intrinsic thickness of about 0.6-1.2 nm and its rich band structure, provides an excellent solution for future storage technologies, further miniaturizing the device, increasing integration, increasing stability, expanding application scenarios, and developing new types of memory The tremendous potential is a brand new way to address today’s memory power consumption and integration.