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石墨烯具有高电子迁移率和高热导率等优良特性,在毫米波、亚毫米波乃至太赫兹器件、超级计算机等方面具有广阔应用前景。然而石墨烯是二维结构,受衬底、栅界面的影响较体材料更为敏感,因而高性能的石墨烯FET器件的研制也成为一个极具挑战性的课题。南京电子器件研究所通过氢插入等工艺用SiC热解法制备出高质量的石墨烯薄膜,材枓霍尔迁移率达2000 cm2/(V·s)。在此基础上,开发了可降低栅介质散射作用的A1自氧化缓冲工艺,同时以自对准和T栅(150 nm栅脚,400 nm栅帽)减小器件的寄生效应,研制出了高性能石墨烯场效应
Graphene has excellent properties such as high electron mobility and high thermal conductivity, and has broad application prospects in millimeter wave, sub-millimeter wave and even terahertz devices and supercomputers. However, graphene is a two-dimensional structure, which is more sensitive to the substrate than the bulk material due to the influence of the substrate and the gate interface. Therefore, the development of high-performance graphene FET devices has also become a challenging task. Nanjing Institute of Electronic Devices through the hydrogen insertion process using SiC pyrolysis method to prepare high-quality graphene film, the material 枓 Hall mobility 2000 cm2 / (V · s). On this basis, A1 self-oxidation buffer technology was developed to reduce the scattering of gate dielectric. At the same time, the self-aligned and T-gate (150 nm gate and 400 nm gate cap) Performance of graphene field effect