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研究了ＭＩＭ器件的电导机制，详细介绍了新提出的ＭＩＭ器件的ｐ－ｎ－－ｎ能带模型，同时利用这一能带模型解释并验证了上电极材料的选择、下电极材料掺Ｎ以及用溅射Ｔａ２Ｏ５膜代替阳极氧化Ｔａ２Ｏ５膜作绝缘层对ＭＩＭ器件伏安特性曲线对称性的影响。利用ｐ－ｎ－－ｎ能带模型首次提出用在氢气气氛下热处理的阳极氧化Ｔａ２Ｏ５膜作ＭＩＭ器件的绝缘层可以提高器件的Ｉ－Ｖ特性曲线的对称性这一新的实验方法。另外，本文还较为详细地讨论了阳极氧化过程对ＭＩＭ器件特性的影响，并首次讨论了对阳极氧化Ｔａ２Ｏ５膜进行热处理时，退火方式和反应室气压变化对ＭＩＭ器件Ｉ－Ｖ特性的影响。
The conductivity mechanism of MIM devices is studied. The p-n-n band model of the newly proposed MIM device is introduced in detail. At the same time, this band model is used to explain and verify the choice of upper electrode material, the doping of lower electrode material and N The Effect of Ta2O5 Films Instead of Anodic Oxide Ta2O5 Films as Insulating Layer on the Symmetry of Volt - ampere Characteristic of MIM Devices. The p - n - n band model was first proposed for the first time in an atmosphere of hydrogen anodized Ta2O5 film as a MIM device insulation layer can improve the device I - V characteristic curve symmetry of the new experimental method. In addition, the effect of anodization process on the characteristics of MIM devices is also discussed in detail, and the effect of annealing method and chamber pressure on I-V characteristics of MIM devices is also discussed for the first time.