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本文介绍了在450—700℃的广阔温度范围内研究Cd和Zn向InP扩散的结果,并对结果作了比较。详细研究了Cd,Zn及其化合物等不同杂质源对扩散的影响。我们用结深(x_j)的平方和时间(t)的比值(x_j~2/t)作为扩散速度的度量,并画出了x_j~2/t-1/T(温度)曲线。发现Cd源,特别是CdP_2源的扩散速度较慢,容易控制它扩散的结深和浓度,昕以它是比较理想的扩散杂质源。利用Tien的中性复合体理论,解释了Cd和Zn在InP中扩散的复杂现象。
This paper describes the results of the diffusion of Cd and Zn into InP over a broad temperature range of 450-700 ℃. The effects of different impurity sources such as Cd, Zn and their compounds on diffusion were investigated in detail. We use the ratio of the square of the junction depth (x_j) to the time (t) (x_j ~ 2 / t) as a measure of the rate of diffusion and plot the x_j ~ 2 / t-1 / T temperature plot. It is found that the Cd source, especially the CdP 2 source, diffuses slowly and easily controls the diffusion depth and concentration of Cd source. Therefore, it is an ideal diffusion impurity source. Using Tien’s neutral complex theory, we explain the complex phenomenon of Cd and Zn diffusing in InP.