论文部分内容阅读
采用双槽电化学腐蚀法在P型单晶硅表面制备两种多孔硅.根据它们的孔径将它们分为介孔硅和大孔硅.使用扫描电子显微镜(SEM)观察两种多孔硅表面和断面形貌,介孔硅和大孔硅的表面化学键用傅里叶变换红外(FTIR)光谱仪来研究,通过I-V特性测试表征两种多孔硅电学特性,随后在室温下测试其气敏特性.结果表明:介孔硅具有较高的气体灵敏度,大孔硅具有较好的气体响应恢复特性.介孔硅对NO2气体具有较好的选择性,大孔硅对NH3气体具有较好的选择性.
Two kinds of porous silicon were prepared on the surface of P-type single-crystal silicon by double-cell electrochemical etching method, and classified into mesoporous silicon and macroporous silicon according to their pore size.The two porous silicon surfaces were observed by scanning electron microscope (SEM) The cross-sectional morphology, the surface chemical bonds of mesoporous silicon and macroporous silicon were studied by Fourier transform infrared (FTIR) spectroscopy, and the electrical properties of two porous silicon were characterized by IV characterization test and then tested for gas sensing properties at room temperature. The results show that mesoporous silica has higher gas sensitivity, and macroporous silicon has better gas response and recovery characteristics. Mesoporous silicon has better selectivity for NO2 gas, and macroporous silicon has better selectivity for NH3 gas.