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硫系玻璃是以VI族元素硫、硒、碲为基础的半导体材料。近年来,对其作为电存储和光存储器件方面的应用可能性作了大量研究。显然,为了制得性能优良的器件,必须制备优质的薄膜,故薄膜制备工艺是一个颇受重视的课题。在实际工作中,我们经常需要制备多组分的薄膜,而硫系玻璃就是一种多组分的材料,其中各组分的熔点和蒸汽压强往往各不相同,相差悬殊。本文针对Te-AS-Ge系统的蒸发工艺进行了研究。碲熔点约450℃,在520℃时的蒸汽压为1毫米汞柱;锗熔点约960℃,在
Chalcogenide glass is a group VI elemental sulfur, selenium, tellurium-based semiconductor material. In recent years, a great deal of research has been done on its potential as an electrical storage and optical storage device. Obviously, in order to obtain excellent performance of the device, we must prepare high-quality film, so the film preparation process is a subject of considerable attention. In practical work, we often need to prepare multi-component film, and the chalcogenide glass is a multi-component material, in which the components of the melting point and vapor pressure often vary widely. In this paper, the evaporation process of Te-AS-Ge system has been studied. Tellurium has a melting point of about 450 ° C and a vapor pressure of 1 mm Hg at 520 ° C; germanium has a melting point of about 960 ° C,