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Epitaxy of SiGe layers by an ultrahigh vacuum chemical vapor deposition system is investigated. Observations with a Nomarski microscope and measurements using Raman scattering show that the surface morphology and the qualities of the epitaxial layers degrade rapidly as the growth temperatures increase from 550℃ to 650℃, but improve greatly when PH 3 is introduced.
Epitaxy of SiGe layers by an ultrahigh vacuum chemical vapor deposition system is investigated. Observations with a Nomarski microscope and measurements using Raman scattering show that the surface morphology and the qualities of the epitaxial layers degrade rapidly as the growth temperatures increase from 550 ° C to 650 ° C , but improve greatly when PH 3 is introduced.