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采用溶液制备法制备了用PVA作为绝缘层、P3HT作为有源层的有机场效应晶体管,研究了不同浓度PVA栅绝缘层对器件性能的影响。实验结果显示,以质量分数为8%的PVA溶液制备的栅绝缘层具有最好的性能,器件的场效应迁移率为0.31 cm2·V-1·s-1,阈值电压为-6 V。进一步分析了PVA栅绝缘层浓度对器件性能提高的原因,结果表明,对于制备溶液化的有机场效应晶体管,选取合适的PVA栅绝缘层浓度非常重要。
The organic field-effect transistor (PVA) with PVA as the insulating layer and P3HT as the active layer was prepared by solution preparation method. The effect of different concentration of PVA gate insulating layer on the device performance was studied. The experimental results show that the gate insulating layer prepared by using 8% PVA solution has the best performance. The field-effect mobility of the device is 0.31 cm2 · V-1 · s-1 and the threshold voltage is -6 V. The reason why the gate insulating layer concentration of PVA increases the performance of the device is further analyzed. The results show that it is very important to select the proper PVA gate insulating layer concentration for the preparation of the solutionized organic field effect transistor.